Output of the circuit, Y = (A + B)·C Y = 1 if C = 1 and A = 0, B = 1 or A = 1, B = 0 or A = B = 1
Semiconductor
Here, the p-n junction diode is forward biased, hence it offers zero resistance. So I AB =
= 10 -2 A
Given, V i = 2cos(15t +
) and Voltage gain A V = 150 For CE transistor phase difference between input and output signal is = 180 o Using formula, A V =
V 0 = A V V i = 1502cos(15t +
+ ) = 300cos
The Boolean expression of this arrangement is Y =
=
= A.B Thus, the combination represents AND gate.
The barrier potential depends on type of semiconductor (For Si, V b = 0.7 V and for Ge, V b = 0.3 V), amount of doping and also on the temperature.
C' =
C =
= A.B Hence the resultant gate is AND gate.
In p-n-p transistor holes are injected into the base while electrons are injected into the base of n-p-n transistor.
Emitter-base junction is forward biased.
The higher hole concentration is in p-region than that in n-region.
In n-type semiconductor, electrons are majority charge carriers and holes are minority charge carriers and pentavalent atoms are dopants.
The output of the given logic circuit is X =
= A.B