In forward biasing, the positive terminal of the battery is connected to p-side and the negative terminal to n-side of p-n junction.
The forward bias voltage opposes the potential barrier.
Due to it, the depletion region becomes thin.
In forward biasing, the positive terminal of the battery is connected to p-side and the negative terminal to n-side of p-n junction.
The forward bias voltage opposes the potential barrier.
Due to it, the depletion region becomes thin.
If a small amount of antimony is added to germanium crystal, crystal becomes n-type semiconductor.
Hence, there will be more free electrons than holes.
Current gain, =
=
= 50
AND, NAND and NOT gates are (iii), (iv) and (ii) respectively.
It is clear from given logic circuit, that out put Y is low when both the inputs are high, otherwise it is high.
Thus logic circuit is NAND gate.
For transistor action, the base region must be very thin and lightly doped.
Also, the emitter-base junction is forward biased and base-collector junction is reverse biased.
Voltage gain= × Impedance gain 50 = β × (200/100) = 25 Power gain = × Voltage gain = 25 × 50 = 1250
In a n-type semiconductors, electrons are majority carriers and holes are minority carriers.
Integrated circuit can act as a complete electronic circuit.
In case of metal, conductivity decreases with increase in temperature and metal has high melting point.