In full wave rectifier the fundamental frequency in ripple is twice of input frequency.
Semiconductor
When the collector is positive and emitter is negative with respect to base, it causes the forward biasing for each junction, which causes conduction of current.
Barrier potential does not depend in diode design while barrier potential depends upon temperature, doping density and forward biasing.
In reverse bias, the size of the depletion region increases thereby increasing the potential barrier.
This truth table represents NAND gate.
For conduction, p-n junction must be forward biased.
For this p-side should be connected to higher potential and n-side to lower potential.
In body-centred cubic (b.c.c.) lattice there are eight atoms at the corners of the cube and one at the centre.
Therefore number of atom per unit cell =
+ 1 = 2
= 0.96 = Current gain, =
=
= 24
This truth table represents NAND gate.
= 0.98 = Current gain, =
=
= 49